Nat Phys 2009,5(9):675–681.CrossRef 2. Ganichev SD, Prettl W: Spin photocurrents in quantum wells . J Phys-Condensed Matt 2003,15(20):935–983.CrossRef 3. Golub LE: Spin-splitting-induced photogalvanic effect in quantum wells . Physical Review B 2003,67(23):235320.CrossRef 4. Ganichev SD, Bel’kov VV, Selleckchem ABT 263 Golub LE, Ivchenko EL, Schneider P, Giglberger S, Eroms J, De Boeck J, Borghs G, Wegscheider W, Weiss D, Prettl W: Experimental separation of Rashba and Dresselhaus spin splittings in semiconductor quantum wells . Phys Rev Lett 2004,92(25):256601.CrossRef 5. Yang CL, He HT, Ding L, Cui LJ, Zeng YP, Wang JN, Ge WK: Spectral dependence

of spin photocurrent and current-induced spin polarization in an InGaAs/InAlAs two-dimensional electron gas . Phys Rev Lett 2006,96(18):186605.CrossRef 6. Cho KS, Liang CT, Chen YF, Tang YQ, Shen B: Spin-dependent selleckchem photocurrent induced by Rashba-type spin splitting in Al 0.25 Ga 0.75 N/GaN heterostructures . Phys Rev B 2007,75(8):085327.CrossRef 7. Giglberger S, Golub LE, Bel’kov VV, Danilov SN, Schuh D, Gerl C, Rohlfing F, Stahl J, Wegscheider W, Weiss D, Prettl W, Ganichev SD: Rashba and Dresselhaus spin splittings in semiconductor quantum wells

measured by spin photocurrents . Phys Rev B 2007,75(3):035327.CrossRef 8. Eldridge PS, Leyland WJH, Lagoudakis PG, Harley RT, Phillips RT, Winkler R, Henini M, Taylor D: Rashba spin-splitting of electrons in asymmetric quantum wells . Phys Rev B 2010,82(4):045317.CrossRef 9. Walser MP, Siegenthaler U, Lechner V, Schuh D, Ganichev SD, Wegscheider W, Salis G: Dependence of the Dresselhaus spin-orbit interaction on the quantum well width . Phys Rev B 2012,86(19):195309.CrossRef 10. Yin C, Yuan H, Wang X, Liu S, Zhang S, Tang N, Xu F, Chen Z, Shimotani H, Iwasa Y, Chen Y, Ge W, Shen B: Tunable surface electron spin splitting with electric double-layer transistors based on InN . Nano Lett 2013,13(5):2024–2029.CrossRef 11. Awschalom DD, Flatte ME: Challenges for semiconductor spintronics . Nat Phys 2007,3(3):153–159.CrossRef 12. Wunderlich

J, Park BG, Irvine AC, Zarbo LP, Rozkotova E, Nemec P, Novak V, Sinova J, Jungwirth T: Spin hall effect transistor . Science 2010,330(6012):1801–1804.CrossRef 13. Fiederling R, Keim M, Reuscher G, Ossau W, Schmidt G, Waag A, Molenkamp LW: Injection and detection of a spin-polarized Tangeritin current in a light-emitting diode . Nature 1999,402(6763):787–790.CrossRef 14. Kotissek P, Bailleul M, Sperl M, Spitzer A, Schuh D, Wegscheider W, Back CH, Bayreuther G: Cross-sectional imaging of spin injection into a semiconductor . Nat Phys 2007,3(12):872–877.CrossRef 15. Dresselhaus G: Spin-orbit coupling effects in zinc blende structures . Phys Rev 1955,100(2):580–586.CrossRef 16. Bychkov YA, Rashba EI: Oscillatory effects and the magnetic susceptibility of carriers in inversion layers . J Phys C Solid State Phys 1984, 17:6039.CrossRef 17.