Chiang YD, Chang WY, Ho CY, Chen CY, Ho CH, Lin SJ, Wu TB, He JH: Single-ZnO-nanowire memory. IEEE Trans Electron Devices 2011, 58:1735–1740.CrossRef 6. Zeng HB, Cai WP, Hu JL, Duan GT, Liu PS, Li Y: Violet photoluminescence from shell layer of Zn/ZnO core-shell nanoparticles click here induced by laser ablation. Appl Phys Lett 2006, 88:171910.CrossRef 7. Zeng H, Duan G, Li Y, Yang S, Xu X, Cai W: Blue luminescence of ZnO nanop articles based on non-equilibrium processes: defect origin s and emission controls. Adv Funct Mater 2010, 20:561–572.CrossRef 8. Odagawa A, Sato H, Inoue IH, Akoh H,
Kawasaki M, Tokura Y, Kanno T, Adachi H: Colossal electroresistance of a Pr0.7Ca0.3MnO3 thin film at room temperature. Phys Rev B 2004, 70:224403.CrossRef 9. Barth S, Hernandez-Ramirez F, Holmes JD, Romano-Rodriguez A: Synthesis and applications of one-dimensional semiconductors. Prog Mater Sci 2010, 55:563–627.CrossRef 10. Huang Y, Yuan GL: Synthesis and field emission properties of ZnO nanorods on Cu substrate. Mater Lett 2012, 82:85–87.CrossRef 11. Kim SI, Lee JH, Chang YW, Hwang SS, Yoo KH: Reversible resistive switching behaviors in NiO nanowires. Appl Phys Lett 2008, 93:033503.CrossRef 12. Yang YC, Pan
F, Liu Q, Liu M, Zeng F: Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application. Nano Lett 2009, 9:1636–1643.CrossRef 13. Lampert MA: Simplified theory of space-charge-limited currents in an insulator with traps. Phys Rev 1956, 103:1648–1656.CrossRef 14. Emtage PR, Tantraporn W: Schottky emission selleck products through thin insulating films. Phys Rev Lett 1962, 8:267–268.CrossRef 15. Yeargan JR, Taylor HL: The Poole-Frenkel
effect with compensation present. J Appl Phys 1968, 39:5600–5604.CrossRef Competing interests The authors declare that they have no competing interests. Authors’ contributions YH fabricated and measured the memory devices and drafted the manuscript. YL and ZHS assisted in the data analysis. GLY and HBZ revised the manuscript critically and made some changes. All authors read and approved the final manuscript.”
“Background Porous silicon (PSi) has excelled as a biosensing platform due to its cost-effective and versatile fabrication, enhanced surface area, and chemical and biological compatibility. nearly Well-established Si surface functionalization chemistry has led to specific binding of several relevant molecules including DNA [1], proteins [2], explosives [3], and illicit drugs [4] to PSi platforms. However, PSi refractometric sensing applications have generally been size limited to molecules that diffuse into the porous matrix to cause a measurable change in effective optical thickness. Pore sizes of 5 to 100 nm diameter have allowed for the detection of larger molecules such as bovine serum albumin (8 nm in width) and anti-MS2 antibodies (15 nm in width) [5, 6].