In our previous research, we have developed a method to optimize the GaAs-on-Si substrate, which has greatly reduced their residual stress and surface defect density [11]. In this work, based on the surface optimization technology that we developed, the RTD Geneticin ic50 structure was then grown on the optimized substrate; combining Raman spectroscopy and I-V characterizations, the stress–strain coupling effect from the Si substrate to GaAs-based RTD was tested. Finally, the piezoresistive coefficient of the RTD was characterized. This method gives us a solution to optimize the epitaxy GaAs layers on the Si substrate, which also proved the possibility

of our future process of integrating GaAs-based RTD on the Si substrate for MEMS sensor applications. Experimental Commercially available GaAs-on-Si wafers were selleck chemical used as the initial substrates in this experiment, AG-881 purchase which were purchased from Spire Corp., Bedford, MA, USA. The GaAs layers were grown directly on 3-in. Si wafers (with N+ doping concentrations of 5 × 1016 cm−2 and 350 μm in thickness). GaAs epilayers with a thickness of 2 μm were grown on (100)-oriented Si with 4° misorientation toward the (111) Si substrate. The initial density of the lattice defect of the purchased

GaAs/Si wafers was about 108 cm−2. The GaAs-based optimization superlattice layers and RTD heterostructures were fabricated by molecular beam epitaxy using Veeco Mod-GEN II, Plainview, NY, USA. InGaAs/GaAs strain superlattice was used as the buffer

layer to optimize the defects and residual stress of the substrate, and then the RTD heterostructures were grown on top as the strain sensing element. The surface topography and IKBKE cross-section of the epilayers were characterized by transmission electron microscopy (FEI Tecnai G2 F20, Hillsboro, OR, USA) and scanning electron microscopy (KYKY-1000B, Beijing, China). The stress–strain coupling effect was characterized by residual stress using the Renishaw inVia Raman microscope system (Gloucestershire, UK; the laser line is 514.5 nm, and the excitation beam power is 5 mW). The luminescence characteristics of the quantum well were observed using Fourier transform infrared spectrometer (Nicolet FTIR760, Appleton, WI, USA) with a power of 1 W and a wavelength of 632.8 nm. The samples were cut into pieces of 0.5 cm × 2 cm for the stress–strain coupling effect test. The schematic of the setup used to strain the samples is provided in Figure 1. The sample was fixed on a homemade test setup from one end. The other end of the substrate was free to move. The micrometer was used to stress the sample from the free end. By tuning the micrometer, different stresses were applied.